SIZ998DT-T1-GE3

SIZ998DT-T1-GE3
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Part Number SIZ998DT-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2 N-CH 30V 8-POWERPAIR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIZ998DT-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 29 - Jan 02 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIZ998DT-T1-GE3 Specifications

Part Number:SIZ998DT-T1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs:6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:930pF @ 15V, 2620pF @ 15V
Power - Max:20.2W, 32.9W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PowerPair® (6x5)

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Quick Inquiry

In Stock 61422 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.68530$2055.9
6000$0.65104$3906.24
15000$0.62656$9398.4

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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