SIZ926DT-T1-GE3

SIZ926DT-T1-GE3
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Part Number SIZ926DT-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2 N-CH 25V 8-POWERPAIR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIZ926DT-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIZ926DT-T1-GE3 Specifications

Part Number:SIZ926DT-T1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs:4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:925pF @ 10V, 2150pF @ 10V
Power - Max:20.2W, 40W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PowerPair® (6x5)

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Quick Inquiry

In Stock 84509 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.57596$1727.88
6000$0.54716$3282.96
15000$0.52659$7898.85

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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