SIAA02DJ-T1-GE3

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Part Number	SIAA02DJ-T1-GE3
Manufacturer	Vishay Siliconix
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 20V 22A/52A PPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SIAA02DJ-T1-GE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 29 - Dec 03 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SIAA02DJ-T1-GE3 Specifications

Part Number:	SIAA02DJ-T1-GE3
Brand:	Vishay Siliconix
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Vishay Siliconix
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	4.7mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	33 nC @ 10 V
Vgs (Max):	+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	1250 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	3.5W (Ta), 19W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-70-6
Package / Case:	PowerPAK® SC-70-6

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