NVH4L022N120M3S

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Part Number	NVH4L022N120M3S
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SIC MOS TO247-4L 22MOHM 1200V
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NVH4L022N120M3S PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NVH4L022N120M3S Specifications

Part Number:	NVH4L022N120M3S
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id:	4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	151 nC @ 18 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	3175 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	352W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4

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