For Reference Only
Part Number | SI5509DC-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
Description | MOSFET N/P-CH 20V 6.1A 1206-8 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SI5509DC-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 07 - Nov 11 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | SI5509DC-T1-GE3 |
Brand: | Vishay Siliconix |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Arrays |
Manufacturer: | Vishay Siliconix |
Product Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.1A, 4.8A |
Rds On (Max) @ Id, Vgs: | 52mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 10V |
Power - Max: | 4.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
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In Stock | 65334 pieces - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
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1 | $0.00000 | $0 |
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