BSC750N10NDGATMA1

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Part Number	BSC750N10NDGATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	MOSFET 2N-CH 100V 3.2A 8TDSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSC750N10NDGATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 27 - Dec 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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BSC750N10NDGATMA1 Specifications

Part Number:	BSC750N10NDGATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Infineon Technologies
Product Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	3.2A
Rds On (Max) @ Id, Vgs:	75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:	4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	720pF @ 50V
Power - Max:	26W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

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