TP65H050G4WS

TP65H050G4WS
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Part Number TP65H050G4WS
Manufacturer Transphorm
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description 650 V 34 A GAN FET
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TP65H050G4WS PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 09 - Sep 13 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TP65H050G4WS Specifications

Part Number:TP65H050G4WS
Brand:Transphorm
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Transphorm
Product Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
FET Feature:-
Power Dissipation (Max):119W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3

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In Stock 7070 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$15.64000$15.64

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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