For Reference Only
Part Number | TP65H050G4WS |
Manufacturer | Transphorm |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | 650 V 34 A GAN FET |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TP65H050G4WS PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Sep 09 - Sep 13 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
Part Number: | TP65H050G4WS |
Brand: | Transphorm |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Transphorm |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 4.8V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: | 24 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1000 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 119W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
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In Stock | 7070 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $15.64000 | $15.64 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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