For Reference Only
Part Number | RQ3E180AJTB1 |
Manufacturer | Rohm Semiconductor |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | NCH 30V 18A MIDDLE POWER MOSFET: |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RQ3E180AJTB1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Sep 09 - Sep 13 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
Part Number: | RQ3E180AJTB1 |
Brand: | Rohm Semiconductor |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Rohm Semiconductor |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 4.5mOhm @ 18A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 11mA |
Gate Charge (Qg) (Max) @ Vgs: | 39 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 4290 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-HSMT (3.2x3) |
Package / Case: | 8-PowerVDFN |
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In Stock | 85468 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.60550 | $0.6055 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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