STGB20H65DFB2

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Part Number	STGB20H65DFB2
Manufacturer	STMicroelectronics
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	TRENCH GATE FIELD-STOP 650 V, 20
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	STGB20H65DFB2 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

STGB20H65DFB2 Specifications

Part Number:	STGB20H65DFB2
Brand:	STMicroelectronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	STMicroelectronics
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	40 A
Current - Collector Pulsed (Icm):	60 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 20A
Power - Max:	147 W
Switching Energy:	265µJ (on), 214µJ (off)
Input Type:	Standard
Gate Charge:	56 nC
Td (on/off) @ 25°C:	16ns/78.8ns
Test Condition:	400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):	215 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package:	D2PAK-3

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