AIKB30N65DF5ATMA1

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Part Number	AIKB30N65DF5ATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IC DISCRETE 650V TO263-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	AIKB30N65DF5ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

AIKB30N65DF5ATMA1 Specifications

Part Number:	AIKB30N65DF5ATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	55 A
Current - Collector Pulsed (Icm):	90 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 30A
Power - Max:	188 W
Switching Energy:	330µJ (on), 100µJ (off)
Input Type:	Standard
Gate Charge:	70 nC
Td (on/off) @ 25°C:	25ns/188ns
Test Condition:	400V, 15A, 23Ohm, 15V
Reverse Recovery Time (trr):	67 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3

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