R6507END3TL1

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Part Number	R6507END3TL1
Manufacturer	Rohm Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	650V 7A TO-252, LOW-NOISE POWER
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	R6507END3TL1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

R6507END3TL1 Specifications

Part Number:	R6507END3TL1
Brand:	Rohm Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rohm Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	665mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	390 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	78W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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