IMBG120R090M1HXTMA1

IMBG120R090M1HXTMA1
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Part Number IMBG120R090M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 1.2KV 26A TO263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IMBG120R090M1HXTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IMBG120R090M1HXTMA1 Specifications

Part Number:IMBG120R090M1HXTMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:125mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id:5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 18 V
Vgs (Max):+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:763 pF @ 800 V
FET Feature:Standard
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-12
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock 7383 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$14.13000$14.13

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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