PJQ4416EP_R2_00001

PJQ4416EP_R2_00001
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Part Number PJQ4416EP_R2_00001
Manufacturer Panjit International Inc.
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description 20V N-CHANNEL ENHANCEMENT MODE M
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PJQ4416EP_R2_00001 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

PJQ4416EP_R2_00001 Specifications

Part Number:PJQ4416EP_R2_00001
Brand:Panjit International Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Panjit International Inc.
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1117 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 26W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN3333-8
Package / Case:8-PowerVDFN

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Quick Inquiry

In Stock 74420 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.58000$0.58

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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