TW083N65C,S1F

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Part Number	TW083N65C,S1F
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	G3 650V SIC-MOSFET TO-247 83MOH
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TW083N65C,S1F PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TW083N65C,S1F Specifications

Part Number:	TW083N65C,S1F
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	N-Channel
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	113mOhm @ 15A, 18V
Vgs(th) (Max) @ Id:	5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:	28 nC @ 18 V
Vgs (Max):	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	873 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	111W (Tc)
Operating Temperature:	175°C
Mounting Type:	Through Hole
Supplier Device Package:	TO-247
Package / Case:	TO-247-3

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