AFGY120T65SPD

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Part Number	AFGY120T65SPD
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT - 650 V 120 A FS3 FOR EV TR
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	AFGY120T65SPD PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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AFGY120T65SPD Specifications

Part Number:	AFGY120T65SPD
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	onsemi
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	160 A
Current - Collector Pulsed (Icm):	360 A
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 120A
Power - Max:	714 W
Switching Energy:	6.6mJ (on), 3.8mJ (off)
Input Type:	Standard
Gate Charge:	125 nC
Td (on/off) @ 25°C:	40ns/80ns
Test Condition:	400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr):	107 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

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