STGB30H60DFB

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Part Number	STGB30H60DFB
Manufacturer	STMicroelectronics
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	TRENCH GATE FIELD-STOP IGBT, HB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	STGB30H60DFB PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

STGB30H60DFB Specifications

Part Number:	STGB30H60DFB
Brand:	STMicroelectronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	STMicroelectronics
Product Status:	Last Time Buy
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 30A
Power - Max:	260 W
Switching Energy:	383µJ (on), 293µJ (off)
Input Type:	Standard
Gate Charge:	149 nC
Td (on/off) @ 25°C:	37ns/146ns
Test Condition:	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):	53 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

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