ISC080N10NM6ATMA1

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Part Number	ISC080N10NM6ATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	TRENCH >=100V PG-TDSON-8
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	ISC080N10NM6ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 25 - Dec 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

ISC080N10NM6ATMA1 Specifications

Part Number:	ISC080N10NM6ATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	8V, 10V
Rds On (Max) @ Id, Vgs:	8.05mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:	24 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1800 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta), 100W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8 FL
Package / Case:	8-PowerTDFN

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