P3M06120T3

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Part Number	P3M06120T3
Manufacturer	PN Junction Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 650V 29A TO-220-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	P3M06120T3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

P3M06120T3 Specifications

Part Number:	P3M06120T3
Brand:	PN Junction Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	PN Junction Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	29A
Drive Voltage (Max Rds On, Min Rds On):	15V
Rds On (Max) @ Id, Vgs:	158mOhm @ 10A, 15V
Vgs(th) (Max) @ Id:	2.2V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	153W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-2L
Package / Case:	TO-220-2

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