IPL60R105P7AUMA1

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Part Number	IPL60R105P7AUMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 650V 33A 4VSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPL60R105P7AUMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IPL60R105P7AUMA1 Specifications

Part Number:	IPL60R105P7AUMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	105mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs:	45 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1952 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	137W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-VSON-4
Package / Case:	4-PowerTSFN

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