TK110U65Z,RQ

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Part Number	TK110U65Z,RQ
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	DTMOS VI TOLL PD=190W F=1MHZ
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK110U65Z,RQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 28 - Jan 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TK110U65Z,RQ Specifications

Part Number:	TK110U65Z,RQ
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	24A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs:	40 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2250 pF @ 300 V
FET Feature:	-
Power Dissipation (Max):	190W (Tc)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	TOLL
Package / Case:	8-PowerSFN