For Reference Only
Part Number | IPD80R3K3P7ATMA1 |
Manufacturer | Infineon Technologies |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 800V 1.9A TO252-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPD80R3K3P7ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Sep 09 - Sep 13 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
Part Number: | IPD80R3K3P7ATMA1 |
Brand: | Infineon Technologies |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Infineon Technologies |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.3Ohm @ 590mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 120 pF @ 500 V |
FET Feature: | - |
Power Dissipation (Max): | 18W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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In Stock | 89958 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
2500 | $0.36360 | $909 |
5000 | $0.34120 | $1706 |
12500 | $0.32999 | $4124.875 |
25000 | $0.32388 | $8097 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.