For Reference Only
Part Number | SSM6J214FE(TE85L,F |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET P-CH 30V 3.6A ES6 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SSM6J214FE(TE85L,F PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 28 - Dec 02 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | SSM6J214FE(TE85L,F |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 10V |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 7.9 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 560 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | ES6 |
Package / Case: | SOT-563, SOT-666 |
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In Stock | 54723 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
4000 | $0.10560 | $422.4 |
8000 | $0.09920 | $793.6 |
12000 | $0.09280 | $1113.6 |
28000 | $0.08960 | $2508.8 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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