FP35R12W2T4B11BOMA1

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Part Number	FP35R12W2T4B11BOMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Modules
Description	IGBT MOD 1200V 54A 215W
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FP35R12W2T4B11BOMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FP35R12W2T4B11BOMA1 Specifications

Part Number:	FP35R12W2T4B11BOMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Modules
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	54 A
Power - Max:	215 W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 35A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	2 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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