FP50R07N2E4B11BOSA1

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Part Number	FP50R07N2E4B11BOSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Modules
Description	IGBT MODULE 650V 70A
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FP50R07N2E4B11BOSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FP50R07N2E4B11BOSA1 Specifications

Part Number:	FP50R07N2E4B11BOSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Modules
Manufacturer:	Infineon Technologies
Product Status:	Discontinued at Digi-Key
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	70 A
Power - Max:	-
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 50A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	3.1 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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