BSP299L6327HUSA1

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Part Number	BSP299L6327HUSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 500V 400MA SOT223-4
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	BSP299L6327HUSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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BSP299L6327HUSA1 Specifications

Part Number:	BSP299L6327HUSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	400 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.8W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223-4-21
Package / Case:	TO-261-4, TO-261AA

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