NVMYS4D1N06CLTWG

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Part Number	NVMYS4D1N06CLTWG
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 22A/100A LFPAK4
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NVMYS4D1N06CLTWG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NVMYS4D1N06CLTWG Specifications

Part Number:	NVMYS4D1N06CLTWG
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:	34 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2200 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.7W (Ta), 79W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK4 (5x6)
Package / Case:	SOT-1023, 4-LFPAK

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