RFD20N03

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Part Number	RFD20N03
Manufacturer	Harris Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	N-CHANNEL POWER MOSFET
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RFD20N03 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 27 - Dec 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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RFD20N03 Specifications

Part Number:	RFD20N03
Brand:	Harris Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Harris Corporation
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	75 nC @ 20 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1150 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	90W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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