G2312

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Part Number	G2312
Manufacturer	Goford Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G2312 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 27 - Dec 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

G2312 Specifications

Part Number:	G2312
Brand:	Goford Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Goford Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	5A
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	18mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	11 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	780 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.25W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23
Package / Case:	TO-236-3, SC-59, SOT-23-3

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