HGTG20N60B3

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Part Number	HGTG20N60B3
Manufacturer	Harris Corporation
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	N-CHANNEL IGBT
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	HGTG20N60B3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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HGTG20N60B3 Specifications

Part Number:	HGTG20N60B3
Brand:	Harris Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Harris Corporation
Product Status:	Obsolete
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	40 A
Current - Collector Pulsed (Icm):	160 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 20A
Power - Max:	165 W
Switching Energy:	475µJ (on), 1.05mJ (off)
Input Type:	Standard
Gate Charge:	80 nC
Td (on/off) @ 25°C:	-
Test Condition:	480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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