G06NP06S2

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Part Number	G06NP06S2
Manufacturer	Goford Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G06NP06S2 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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G06NP06S2 Specifications

Part Number:	G06NP06S2
Brand:	Goford Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Goford Semiconductor
Product Status:	Active
FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Rds On (Max) @ Id, Vgs:	35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	-
Power - Max:	2W (Tc), 2.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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