DMN2016UTS-13

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Part Number	DMN2016UTS-13
Manufacturer	Diodes Incorporated
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	MOSFET 2N-CH 20V 8.58A 8-TSSOP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	DMN2016UTS-13 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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DMN2016UTS-13 Specifications

Part Number:	DMN2016UTS-13
Brand:	Diodes Incorporated
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Diodes Incorporated
Product Status:	Active
FET Type:	2 N-Channel (Dual) Common Drain
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	8.58A
Rds On (Max) @ Id, Vgs:	14.5mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1495pF @ 10V
Power - Max:	880mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

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