GPI65010DF56

GPI65010DF56
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Part Number GPI65010DF56
Manufacturer GaNPower
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description GANFET N-CH 650V 10A DFN 5X6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GPI65010DF56 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GPI65010DF56 Specifications

Part Number:GPI65010DF56
Brand:GaNPower
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:GaNPower
Product Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A
Drive Voltage (Max Rds On, Min Rds On):6V
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs:2.6 nC @ 6 V
Vgs (Max):+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds:90 pF @ 400 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die

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In Stock 19354 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$5.00000$5

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