For Reference Only
Part Number | TP65H050WS |
Manufacturer | Transphorm |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | GANFET N-CH 650V 34A TO247-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TP65H050WS PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 24 - Dec 28 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | TP65H050WS |
Brand: | Transphorm |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Transphorm |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Cascode Gallium Nitride FET) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 12V |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 4.8V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: | 24 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1000 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 119W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
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In Stock | 4802 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $16.19000 | $16.19 |
10 | $14.72000 | $147.2 |
30 | $13.61600 | $408.48 |
120 | $12.51200 | $1501.44 |
270 | $11.40800 | $3080.16 |
510 | $10.67200 | $5442.72 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.