DMT12H090LFDF4-7

DMT12H090LFDF4-7
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Part Number DMT12H090LFDF4-7
Manufacturer Diodes Incorporated
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 115V 3.4A 6DFN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models DMT12H090LFDF4-7 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 11 - Nov 15 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

DMT12H090LFDF4-7 Specifications

Part Number:DMT12H090LFDF4-7
Brand:Diodes Incorporated
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Diodes Incorporated
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):115 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:251 pF @ 50 V
FET Feature:-
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN2020-6
Package / Case:6-PowerXDFN

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In Stock 51014 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.39588$0.39588

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