TSM60NB190CM2 RNG

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Part Number	TSM60NB190CM2 RNG
Manufacturer	Taiwan Semiconductor Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 600V 18A TO263
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TSM60NB190CM2 RNG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TSM60NB190CM2 RNG Specifications

Part Number:	TSM60NB190CM2 RNG
Brand:	Taiwan Semiconductor Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Taiwan Semiconductor Corporation
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	31 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1273 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	150.6W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D²Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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