WNSC10650T6J

Enlarge

For Reference Only

Part Number	WNSC10650T6J
Manufacturer	WeEn Semiconductors
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	SILICON CARBIDE POWER DIODE
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	WNSC10650T6J PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 07 - Nov 11 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

WNSC10650T6J Specifications

Part Number:	WNSC10650T6J
Brand:	WeEn Semiconductors
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	WeEn Semiconductors
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650 V
Current - Average Rectified (Io):	10A
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 10 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	60 µA @ 650 V
Capacitance @ Vr, F:	328pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	4-VSFN Exposed Pad
Supplier Device Package:	5-DFN (8x8)
Operating Temperature - Junction:	175°C (Max)

BAS116LS-QYL	BAS116LS-Q/SOD882BD/XSON2	37494 More on Order
MBR2045MFST3G	DIODE SCHOTTKY 45V 20A 5DFN	71521 More on Order
SJPJ-D3VR	DIODE SCHOTTKY 30V 1A SJP	54574 More on Order
VS-10ETS10S-M3	DIODE GEN PURP 1KV 10A D2PAK	70452 More on Order
STTH30RQ06G-TR	DIODE GEN PURP 600V 30A D2PAK	45475 More on Order
BY500-200	DIODE FR D5.4X7.5 200V 5A	78157 More on Order
BD890YS_L2_00001	SURFACE MOUNT SCHOTTKY BARRIER R	44614 More on Order
HV5	HV DIODE DO-15 5000V 0.2A	31008 More on Order
1N4148TA	DIODE GEN PURP 100V 200MA DO35	47202 More on Order
CUD3-02 TR13 PBFREE	DIODE GEN PURP 200V 4A DPAK	83297 More on Order
AS1G-HF	AUTOMOTIVE RECTIFIER GEN PURP 40	94964 More on Order
HS3G-K M6G	50NS, 3A, 400V, HIGH EFFICIENT R	42621 More on Order