NXPSC126506Q

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Part Number	NXPSC126506Q
Manufacturer	WeEn Semiconductors
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	SILICON CARBIDE POWER DIODE
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NXPSC126506Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 08 - Dec 12 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NXPSC126506Q Specifications

Part Number:	NXPSC126506Q
Brand:	WeEn Semiconductors
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	WeEn Semiconductors
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650 V
Current - Average Rectified (Io):	12A
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 12 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	80 µA @ 650 V
Capacitance @ Vr, F:	380pF @ 1V, 1MHz
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	TO-220AC
Operating Temperature - Junction:	175°C (Max)

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