SQM100N10-10_GE3

SQM100N10-10_GE3
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Part Number SQM100N10-10_GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 100A TO263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SQM100N10-10_GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SQM100N10-10_GE3 Specifications

Part Number:SQM100N10-10_GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8050 pF @ 25 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D²Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Quick Inquiry

In Stock 27905 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
800$1.68300$1346.4
1600$1.57080$2513.28
2400$1.49226$3581.424
5600$1.43616$8042.496

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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