SIS932EDN-T1-GE3

SIS932EDN-T1-GE3
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Part Number SIS932EDN-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET N-CH DL 30V PWRPAK 1212-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIS932EDN-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIS932EDN-T1-GE3 Specifications

Part Number:SIS932EDN-T1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Rds On (Max) @ Id, Vgs:22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 15V
Power - Max:2.6W (Ta), 23W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® 1212-8 Dual
Supplier Device Package:PowerPAK® 1212-8 Dual

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Quick Inquiry

In Stock 65696 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.25595$767.85
6000$0.24035$1442.1
15000$0.22475$3371.25
30000$0.21383$6414.9

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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