For Reference Only
Part Number | SIHU4N80E-GE3 |
Manufacturer | Vishay Siliconix |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 800V 4.3A IPAK |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SIHU4N80E-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 30 - Dec 04 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | SIHU4N80E-GE3 |
Brand: | Vishay Siliconix |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Vishay Siliconix |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.27Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 622 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 69W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Long Leads, IPak, TO-251AB |
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In Stock | 93184 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $2.21000 | $2.21 |
10 | $2.00300 | $20.03 |
100 | $1.62230 | $162.23 |
500 | $1.27576 | $637.88 |
1000 | $1.06785 | $1067.85 |
2500 | $0.99855 | $2496.375 |
5000 | $0.96390 | $4819.5 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.