SIHU4N80E-GE3

SIHU4N80E-GE3
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Part Number SIHU4N80E-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 4.3A IPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHU4N80E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 04 - Nov 08 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIHU4N80E-GE3 Specifications

Part Number:SIHU4N80E-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:622 pF @ 100 V
FET Feature:-
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251)
Package / Case:TO-251-3 Long Leads, IPak, TO-251AB

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Quick Inquiry

In Stock 93184 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.21000$2.21
10$2.00300$20.03
100$1.62230$162.23
500$1.27576$637.88
1000$1.06785$1067.85
2500$0.99855$2496.375
5000$0.96390$4819.5

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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