SIHL630STRL-GE3

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Part Number	SIHL630STRL-GE3
Manufacturer	Vishay Siliconix
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 200V 9A D2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SIHL630STRL-GE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 22 - Nov 26 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SIHL630STRL-GE3 Specifications

Part Number:	SIHL630STRL-GE3
Brand:	Vishay Siliconix
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Vishay Siliconix
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Rds On (Max) @ Id, Vgs:	400mOhm @ 5.4A, 5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	40 nC @ 10 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	1100 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta), 74W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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