For Reference Only
| Part Number | SIHG22N60E-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET N-CH 600V 21A TO247AC |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIHG22N60E-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 16 - Nov 20 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SIHG22N60E-GE3 |
| Brand: | Vishay Siliconix |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Vishay Siliconix |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 180mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 86 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1920 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 227W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247AC |
| Package / Case: | TO-247-3 |
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| In Stock | 18568 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $5.09000 | $5.09 |
| 10 | $4.56000 | $45.6 |
| 100 | $3.76800 | $376.8 |
| 500 | $3.08160 | $1540.8 |
| 1000 | $2.62400 | $2624 |
| 2500 | $2.50080 | $6252 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
