SIHB12N60ET1-GE3

SIHB12N60ET1-GE3
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Part Number SIHB12N60ET1-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 12A TO263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHB12N60ET1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIHB12N60ET1-GE3 Specifications

Part Number:SIHB12N60ET1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:937 pF @ 100 V
FET Feature:-
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Quick Inquiry

In Stock 63370 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

Warm Tips: Please fill out the form below. We will contact you as soon as possible.

Pricing (USD)

Qty. Unit Price Ext. Price
1$2.35000$2.35
10$2.13100$21.31
100$1.72530$172.53
500$1.35676$678.38
1000$1.13565$1135.65
2500$1.06195$2654.875
5000$1.02510$5125.5

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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