For Reference Only
Part Number | SIDR626DP-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 60V 42.8A/100A PPAK |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SIDR626DP-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Sep 09 - Sep 13 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
Part Number: | SIDR626DP-T1-GE3 |
Brand: | Vishay Siliconix |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Vishay Siliconix |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 42.8A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 1.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 102 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5130 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 6.25W (Ta), 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8DC |
Package / Case: | PowerPAK® SO-8 |
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In Stock | 29171 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
3000 | $1.36323 | $4089.69 |
6000 | $1.31274 | $7876.44 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.