SIA912DJ-T1-GE3

SIA912DJ-T1-GE3
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Part Number SIA912DJ-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 12V 4.5A SC70-6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIA912DJ-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIA912DJ-T1-GE3 Specifications

Part Number:SIA912DJ-T1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Product Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:4.5A
Rds On (Max) @ Id, Vgs:40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 6V
Power - Max:6.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-70-6 Dual
Supplier Device Package:PowerPAK® SC-70-6 Dual

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Quick Inquiry

In Stock 34145 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.00000$0

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