SI8410DB-T2-E1

SI8410DB-T2-E1
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Part Number SI8410DB-T2-E1
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 4MICRO FOOT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI8410DB-T2-E1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 25 - Dec 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SI8410DB-T2-E1 Specifications

Part Number:SI8410DB-T2-E1
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 10 V
FET Feature:-
Power Dissipation (Max):780mW (Ta), 1.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Micro Foot (1x1)
Package / Case:4-UFBGA

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Quick Inquiry

In Stock 99058 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.50446$1513.38
6000$0.48078$2884.68
15000$0.46386$6957.9

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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