SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3
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Part Number SI6562CDQ-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 6.7A 8-TSSOP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI6562CDQ-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 29 - Jan 02 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SI6562CDQ-T1-GE3 Specifications

Part Number:SI6562CDQ-T1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6.7A, 6.1A
Rds On (Max) @ Id, Vgs:22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:850pF @ 10V
Power - Max:1.6W, 1.7W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP

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Quick Inquiry

In Stock 94756 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.48380$1451.4
6000$0.46109$2766.54
15000$0.44486$6672.9

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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