For Reference Only
| Part Number | SI6562CDQ-T1-BE3 |
| Manufacturer | Vishay Siliconix |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
| Description | N- AND P-CHANNEL 20-V (D-S) MOSF |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI6562CDQ-T1-BE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 08 - Dec 12 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SI6562CDQ-T1-BE3 |
| Brand: | Vishay Siliconix |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Vishay Siliconix |
| Product Status: | Active |
| FET Type: | N and P-Channel |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs: | 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V, 51nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 10V, 1200pF @ 10V |
| Power - Max: | 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
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| In Stock | 76391 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $1.07000 | $1.07 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
