For Reference Only
Part Number | SI4966DY-T1-E3 |
Manufacturer | Vishay Siliconix |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 20V 8SOIC |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SI4966DY-T1-E3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 01 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | SI4966DY-T1-E3 |
Brand: | Vishay Siliconix |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Arrays |
Manufacturer: | Vishay Siliconix |
Product Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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In Stock | 67797 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
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1 | $0.00000 | $0 |
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