For Reference Only
| Part Number | SI4447DY-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET P-CH 40V 3.3A 8SO |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI4447DY-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Sep 18 - Sep 22 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SI4447DY-T1-GE3 |
| Brand: | Vishay Siliconix |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Vishay Siliconix |
| Product Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V, 10V |
| Rds On (Max) @ Id, Vgs: | 72mOhm @ 4.5A, 15V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 4.5 V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 805 pF @ 20 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.1W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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| In Stock | 70464 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2500 | $0.35595 | $889.875 |
| 5000 | $0.33285 | $1664.25 |
| 12500 | $0.32130 | $4016.25 |
| 25000 | $0.31500 | $7875 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
